The resistance switching of BiFeO3-Nia/b/La0.7Sr0.3MnO3 was enhanced by regulating the ferroelectric polarization

Bi 0.89 Ho 0.08 Sr 0.03 Fe 0.97-x Mn Ni a/b O 3 /La 0.7 0.3 MnO (BiFeO -Ni /LSMO), (Ni , a≠b a, b ∈ x, x = 0.01–0.04) films were successfully prepared by the wet chemical method. The results show that change of structure makes interface conductivity upper layer and bottom different, which in difference polarization. Ferroelectric polarization leads to changes thickness depletion height barrier, thereby improving resistance switching behavior BiFeO /LSMO film. ferroelectric 0.03/0.01 film has a large under different electric field, resulting significant between high low states. achieves ratio, as 39. Finally, superlattice composite realized multi-functionalization film, provides possibility for application polymorphic non-volatile storage devices.